Band inversion induced large-gap quantum spin Hall states in III-Bi-monolayer/${\mathrm{SiO}}_{2}$

Y. Xia, S. Jin, J. Hu, R. Claessen, W. Hanke, R. Thomale, and G. Li

Abstract

We extend the px−py large-gap scenario to the band inversion systems and exemplify the mechanism with a family of III-Bi honeycomb monolayers on SiO2, which can be the next generation of large-gap quantum spin Hall (QSH) systems. First, it suggests a topological gap of the same order as the current record kept of bismuthene/SiC(0001). Second, the band inversion mechanism in which these QSH insulators originate is qualitatively distinct from the Kane-Mele paradigm. Our work demonstrates that the px−py scenario can be utilized to promote large-gap QSH states with both Kane-Mele and band inversion mechanisms, providing an efficient building principle for future topological device construction.

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