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Triplet Superconductivity from Nonlocal Coulomb Repulsion in an Atomic Sn Layer Deposited onto a Si(111) Substrate

Sebastian Wolf, Domenico Di Sante, Tilman Schwemmer, Ronny Thomale, and Stephan Rachel
Phys. Rev. Lett. 128, 167002 – Published 22 April 2022
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Abstract

Atomic layers deposited on semiconductor substrates introduce a platform for the realization of the extended electronic Hubbard model, where the consideration of electronic repulsion beyond the on-site term is paramount. Recently, the onset of superconductivity at 4.7 K has been reported in the hole-doped triangular lattice of tin atoms on a silicon substrate. Through renormalization group methods designed for weak and intermediate coupling, we investigate the nature of the superconducting instability in hole-doped Sn/Si(111). We find that the extended Hubbard nature of interactions is crucial to yield triplet pairing, which is f-wave (p-wave) for moderate (higher) hole doping. In light of persisting challenges to tailor triplet pairing in an electronic material, our finding promises to pave unprecedented ways for engineering unconventional triplet superconductivity.

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  • Received 14 July 2021
  • Accepted 29 March 2022

DOI:https://doi.org/10.1103/PhysRevLett.128.167002

© 2022 American Physical Society

Physics Subject Headings (PhySH)

Condensed Matter, Materials & Applied Physics

Authors & Affiliations

Sebastian Wolf1, Domenico Di Sante2,3, Tilman Schwemmer4, Ronny Thomale4, and Stephan Rachel1

  • 1School of Physics, University of Melbourne, Parkville, Victoria 3010, Australia
  • 2Department of Physics and Astronomy, University of Bologna, 40127 Bologna, Italy
  • 3Center for Computational Quantum Physics, Flatiron Institute, New York, New York 10010, USA
  • 4Institut für Theoretische Physik und Astrophysik, Universität Würzburg, Am Hubland Campus Süd, Würzburg 97074, Germany

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Issue

Vol. 128, Iss. 16 — 22 April 2022

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