Directional electron filtering at a superconductor-semiconductor interface

Daniel Breunig, Song-Bo Zhang, Björn Trauzettel, and T. M. Klapwijk
Phys. Rev. B 103, 165414 – Published 15 April 2021

Abstract

We evaluate the microscopically relevant parameters for electrical transport of hybrid superconductor-semiconductor interfaces. In contrast to the commonly used geometrically constricted metallic systems, we focus on materials with dissimilar electronic properties like low-carrier density semiconductors combined with superconductors, without imposing geometric confinement. We find an intrinsic mode-selectivity, a directional momentum-filter, due to the differences in electronic band structure, which creates a separation of electron reservoirs each at the opposite sides of the semiconductor, while at the same time selecting modes propagating almost perpendicular to the interface. The electronic separation coexists with a transport current dominated by Andreev reflection and low elastic backscattering, both dependent on the gate-controllable electronic properties of the semiconductor.

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  • Received 7 December 2020
  • Revised 1 April 2021
  • Accepted 1 April 2021

DOI:https://doi.org/10.1103/PhysRevB.103.165414

©2021 American Physical Society

Physics Subject Headings (PhySH)

Condensed Matter, Materials & Applied Physics

Authors & Affiliations

Daniel Breunig1, Song-Bo Zhang1, Björn Trauzettel1,4, and T. M. Klapwijk2,3,4

  • 1Institut für Theoretische Physik und Astrophysik, Universität Würzburg, Am Hubland, D-97074 Würzburg, Germany
  • 2Kavli Institute of NanoScience, Faculty of Applied Sciences, Delft University of Technology, Lorentzweg 1, 2628 CJ Delft, The Netherlands
  • 3Physikalisches Institut, Universität Würzburg, Am Hubland, D-97074 Würzburg, Germany
  • 4Würzburg-Dresden Cluster of Excellence ct.qmat, Germany

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Issue

Vol. 103, Iss. 16 — 15 April 2021

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