Electronic materials can sustain a variety of unusual, but symmetry protected, touchings of valence and conduction bands, each of which is identified by a distinct topological invariant. Well-known examples include linearly dispersing pseudorelativistic fermions in monolayer graphene, Weyl and nodal-loop semimetals, biquadratic (bicubic) band touching in bilayer (trilayer) graphene, as well as mixed dispersions in multi-Weyl systems. Here, we show that depending on the underlying band curvature, the shear viscosity in the collisionless regime displays a unique power-law scaling with frequency at low temperatures, bearing the signatures of the band topology, which are distinct from the ones when the system resides at the brink of a topological phase transition into a band insulator. Therefore, besides the density of states (governing specific heat, compressibility) and dynamic conductivity, shear viscosity can be instrumental to pin nodal topology in electronic materials.

• Received 23 December 2019
• Accepted 1 April 2020

DOI:https://doi.org/10.1103/PhysRevB.101.161111

Published by the American Physical Society under the terms of the Creative Commons Attribution 4.0 International license. Further distribution of this work must maintain attribution to the author(s) and the published article's title, journal citation, and DOI. Open access publication funded by the Max Planck Society.

Published by the American Physical Society